Enhancing the limit of uniaxial magnetic anisotropy induced by ion beam erosion

نویسندگان

چکیده

Artificial tailoring of magnetic anisotropy by manipulating interfacial morphology and film structure is fundamental interest from an application point view in spintronic memory devices. This Letter reports approach to engineer enhance the strength oblique incidence ion beam erosion (IBE)-induced in-plane uniaxial (UMA) simultaneous modification texture. Cobalt Si substrate have been taken as a model system meet this objective. Unlike conventional thin deposition on ripple patterned or post-growth IBE film, we direct our effort sequential subsequent film. Detailed situ investigation shows that grows textured polycrystalline state with formation nanometric surface ripples. The also exhibits pronounced UMA easy axis oriented parallel direction. Remarkably, induced about one order magnitude larger than IBE-induced reported earlier. capability imposing crystallographic texture throughout layer gives rise magneto-crystalline along shape ripples, which enhances illustrates universal applicability present method.

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ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2023

ISSN: ['1520-8842', '0003-6951', '1077-3118']

DOI: https://doi.org/10.1063/5.0125851